Understanding Interface-Controlled Resistance Drift in Superlattice Phase Change Memory IEEE ELECTRON DEVICE LETTERS Wu, X., Khan, A., Ramesh, P., Perez, C., Kim, K., Lee, Z., Saraswat, K., Goodson, K.

These results demonstrate the importance of strain engineering 2D semiconductors for performance enhancements in integrated circuits, or for applications such as flexible strain sensors. We also show a gate-voltage-dependent gauge factor up to 200 for monolayer MoS2, which is higher than previous values reported for sub-1 nm thin piezoresistive films. The on-state current and mobility are nearly doubled with tensile strain up to 0.7%, and devices return to their initial state after release of the strain. Here, we experimentally show strain-enhanced electron mobility in monolayer MoS2 transistors with uniaxial tensile strain, on flexible substrates. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g., by reducing intervalley scattering or lowering effective masses. Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades.

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Stanford Woods Institute for the Environment.Stanford Institute for Economic Policy Research (SIEPR).Institute for Stem Cell Biology and Regenerative Medicine.Institute for Human-Centered Artificial Intelligence (HAI).Institute for Computational and Mathematical Engineering (ICME).Freeman Spogli Institute for International Studies.Stanford Doerr School of Sustainability.

Eric h h chang